pnp epitaxial bc856/857/858/859/ 860 silicon transistor switching and amplifier applications suitable for automatic insertion in thick and thin-film circuits low noise: bc859, bc860 complement to bc846 ... bc850 absolute maximum ratings (t a =25 c ) electrical characteristics (t a =25 c ) h fe classification marking code characteristic symbol rating unit collector-base voltage : bc856 : bc857/860 : bc858/859 collector-emitter voltage : bc856 : bc857/860 : bc858/859 emitter-base voltage collector current (dc) collector dissipation junction temperature storage temperature v cbo v ceo v ebo i c p c t j t stg -80 -50 -30 -65 -45 -30 -5 -100 310 150 -65 ~ 150 v v v v v v v ma mw c c characteristic symbol test conditions min typ max unit collector cut-off current dc current gain collector-emitter saturation voltage collector-base saturation voltage base-emitter on voltage current gain bandwidth product collector-base capacitance noise figure : bc856/857/858 : bc859/860 : bc859 : bc860 i cbo h fe v ce (sat) v be (sat) v be (on) f t c cbo nf nf v cb = -30v, i e =0 v ce = -5v, i c = -2ma i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5ma i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5ma v ce = -5v, i c = -2ma v ce = -5v, i c = -10ma v ce = -5v, i c = -10ma f=100mhz v cb = -10v, f=1mhz v ce = -5v, i c = -200 m a f=1khz, r g =2 k w v ce = -5v, i c = -200 m a r g =2 k w f=30~15000hz 110 -600 -90 -250 -700 -900 -660 150 2 1 1.2 1.2 -15 800 -300 -650 -750 -800 6 10 4 4 2 na mv mv mv mv mv mv mhz pf db db db db classification a b c h fe 110-220 200-450 420-800 type 856a 856b 856c 857a 857b 857c 858a 858b 858c 859a 859b 859c 860a 860b 860c mark 9aa 9ab 9ac 9ba 9bb 9bc 9ca 9cb 9cc 9da 9db 9dc 9ea 9eb 9ec sot-23 1. base 2. emitter 3. collector ? 1999 fairchild semiconductor corporation rev. b
pnp epitaxial bc856/857/858/859/ 860 silicon transistor
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